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filingDate 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5e4eca80738df2b2ba9c258131806c5
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publicationDate 2022-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-115106929-A
titleOfInvention A chemical mechanical polishing device for silicon carbide wafers
abstract The invention relates to the technical field of silicon carbide polishing, and a chemical mechanical polishing device for silicon carbide wafers, comprising a polishing pad body on which an abrasive grain layer is fixed, and the abrasive grains in the abrasive grain layer are uniformly distributed; The polishing liquid includes Fenton's reagent for oxidizing the surface of the silicon carbide wafer; a driving device, the driving device drives the silicon carbide wafer to polish on the abrasive grain layer; an electrochemical device, the electrochemical device includes an anode and a cathode, Electro-Fenton reaction system is formed by anode and cathode and Fenton reagent in polishing liquid; polishing liquid replenishing device. In the present invention, the polishing liquid adopts Fenton's reagent and an aqueous solution. Fenton's reagent provides ferrous ions and hydrogen peroxide. After the participation of ferrous ions and hydrogen peroxide in the reaction is reduced, the electrochemical device is used to realize the cyclic use of Fenton's reagent. , Secondly, the abrasive grain layer is deposited on the polishing pad body, and the abrasive grains will not enter the polishing liquid.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115558427-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116160355-A
priorityDate 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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