http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115106882-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c7ca7d8362cba3615b099b1c506f33f4 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B9-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28D5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B57-02 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B28D5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B9-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B57-02 |
filingDate | 2022-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_963e89caeb7c1a42cc46ee06b277ee4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec1e17b3f6082311997720af9d796382 |
publicationDate | 2022-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-115106882-A |
titleOfInvention | A kind of processing method of cadmium zinc telluride wafer |
abstract | The present invention relates to the embodiment of the present invention and provides a method for processing cadmium zinc telluride wafers. 2. Grinding: according to the outer diameter of the cadmium zinc telluride wafer to be processed and shaped, the outer diameter of the cadmium zinc telluride slice is subjected to grinding treatment; step 3, chamfering: the edge of the obtained cadmium zinc telluride wafer is chamfered; step 4. Detection: the outer diameter of the obtained cadmium zinc telluride wafer is detected, and the detection result is compared with the outer diameter of the cadmium zinc telluride wafer to be processed; Polishing; wherein, step 1, step 2, step 3 and step 5 are all performed in a low temperature environment. The cadmium zinc telluride wafer processed by the processing method of the cadmium zinc telluride wafer in the embodiment of the present invention has the advantages of good forming effect and less damage. |
priorityDate | 2022-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.