http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115101608-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a4a713894ac9f30dda1299300e99f80b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate | 2022-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6ad8b83f19cc1e23babd0729df205c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dd7f19df38500779c1b0f66024dc38e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09f05ef2f28f3126597ea2e5603393c0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2fcb34d5c7a30bdf749b6c96aa67e42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9651680eaeaff288ef59cacde57ab2b4 |
| publicationDate | 2022-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115101608-A |
| titleOfInvention | Graphene infrared detector |
| abstract | The present disclosure provides a graphene infrared detector, comprising: a substrate; a dielectric layer formed on the substrate; a source electrode and a drain electrode extending from the surface of the dielectric layer into the dielectric layer, wherein the source electrode and the drain electrode are between the source electrode and the drain electrode. Asymmetric in structure; graphene, formed on the surface of the dielectric layer, source electrode and drain electrode; infrared sensitive semiconductor thin film, formed on graphene. By setting an asymmetric electrode structure, the graphene infrared detector can realize the zero-bias operation of the graphene infrared detector, and an infrared sensitive semiconductor film is introduced on the surface of the graphene, which can be used as a sensitizing layer to improve the photoresponse of the graphene infrared detector. It solves the technical problems of large dark current and low responsivity of graphene infrared detectors. |
| priorityDate | 2022-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.