http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115101578-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f358cea49c7067a65ca8d4b02fffba1c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7398 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2022-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_845922b7ca364c869a8b244e591125f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_829380f60da158b26ade9159c8f53623 |
| publicationDate | 2022-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115101578-A |
| titleOfInvention | A kind of IGBT device with reverse recovery diode and preparation method thereof |
| abstract | The invention provides an IGBT device with a reverse recovery diode and a preparation method thereof. The IGBT device comprises: an NPN doped region, the NPN doped region includes two near-edge regions with N+ type doped ions, The impurity ions are two secondary edge regions of N++ type and the central region where the doping ions are P+ type, wherein the ion concentration of the N++ type doping is greater than the ion concentration of the N+ type doping. The invention realizes redefining the arrangement and doping concentration of the fast recovery diode integrated in the IGBT by doping different doping concentrations in the doping region, and optimizes the structure of the integrated fast recovery diode IGBT, so that the fast recovery diode is integrated while the fast recovery diode is integrated. , effectively optimize the current distribution inside the chip, increase the protection capability of the chip, make the chip more robust, and protect the chip more effectively from the structure. |
| priorityDate | 2022-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.