Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2022-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba66dfbb81ae8c463244e79d1dca4f57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cce075542b2083a3c7550e071f096a22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b29a66e301653a4862a2dd749f796840 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad37bbbb37999c5783995ddd70439c27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2f31c00a86e3079a0d8abdd9f15c8ad |
publicationDate |
2022-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-115084220-A |
titleOfInvention |
Semiconductor device structure |
abstract |
The present disclosure proposes a semiconductor device structure. The conductor device structure includes a first source/drain epitaxial feature; a second source/drain epitaxial feature disposed adjacent to the first source/drain epitaxial feature; and a first dielectric layer disposed on the first source/drain epitaxial feature between the drain epitaxial part and the second source/drain epitaxial part; a first dielectric spacer disposed under the first dielectric layer; and a second dielectric layer disposed under and in contact with the first dielectric layer a first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials. |
priorityDate |
2021-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |