http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115064619-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d45dceb37d9611fe0d2a928fd35f074 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_594e98619bf17da8304c430706610651 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_251552b4b99cb7af929a2c0f9127959d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce027fdb229126c5fb3e64e60a4adefb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a229155e8587839ffc4e7bdd2dd8f186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e041e88ae08dead6a60c2ae217778d81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_061be75519789085a9504874a1fcf5b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfa644fab05a419cc663b499cd78f402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab5199bcca0172b6c1ea40cf39a87e2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b11bf0ba39feb04548497960416ab99f |
| publicationDate | 2022-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115064619-A |
| titleOfInvention | Light-emitting diodes and light-emitting devices |
| abstract | The present invention relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode, which comprises an epitaxial structure, a first electrode and a second electrode, the epitaxial structure has opposite first and second surfaces, and the epitaxial structure includes an N-type semiconductor layer, Light-emitting layer and P-type semiconductor layer. The light-emitting layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The P-type semiconductor layer includes a P-type contact layer and a P-type base layer. The P-type base layer is located between the P-type contact layer and the light-emitting layer. , the first electrode is located on the second surface of the epitaxial structure and is electrically connected to the N-type semiconductor layer, the second electrode is located on the second surface of the epitaxial structure and is electrically connected to the P-type semiconductor layer, wherein the P-type contact layer doped with P The type impurity concentration gradually decreases along the direction from the first surface to the second surface. Thereby, the luminous efficiency of the light-emitting diode can be effectively improved, and the aging light decay can also be significantly improved. |
| priorityDate | 2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.