| abstract |
The invention discloses a CMOS device based on a GaN/YAlN/GaN heterojunction and a manufacturing method thereof, which mainly solves the problems of low carrier concentration and mobility of the existing GaN-based CMOS. It includes from bottom to top: substrate, buffer layer, GaN n-type channel layer, YAlN barrier layer, GaN p-type channel layer, p-GaN layer, insulating gate dielectric layer, and there is a depth to the n-type channel in the middle. The isolation trench in the middle of the channel layer; the p-GaN layer on the right side of the isolation trench is provided with a right gate electrode, and the YAlN barrier layer is provided with right source and drain electrodes at both ends to form an n-type field effect transistor; the left side of the isolation trench is provided with a right gate electrode. A left gate electrode is arranged on the insulating gate dielectric layer, and left source and drain electrodes are arranged at both ends of the p-GaN layer to form a p-type field effect transistor, and the two field effect transistors are interconnected. The invention can improve the carrier concentration and mobility of the CMOS device, improve the operating frequency and output power of the device, and can be used in a full GaN power system. |