http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115020556-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
| filingDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6f7f3a631819ba456ff67872cd882f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4092d3d346180baf82dd0dd17b0e094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8538b047177c1b9b9563082f75bbfcf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e693bbf89f585cbc81db86b113801b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed30439c9275d4340e076d147486bc62 |
| publicationDate | 2022-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115020556-A |
| titleOfInvention | Method for preparing high luminous efficiency AlGaN nanopillar LED structure |
| abstract | The invention discloses a method for preparing an AlGaN nano-column LED structure with high luminous efficiency. An n-type GaN nano-column and an n-type AlGaN nano-column are grown on a conventional substrate, and an undoped "AlGaN well-AlGaN barrier" quantum well structure is grown again. , and finally grow p-type AlGaN nanopillars. High-quality n-type doped GaN nanopillars are obtained by optimization, n-type doped AlGaN nanopillars are grown on the GaN nanopillars, and the undoped AlGaN quantum well structure is used as the carrier recombination active region, and finally p-type doping is grown again. AlGaN nanopillars. In the present invention, AlGaN nano-columns are grown for a period of time before growing the quantum well structure, and the quantum well structure is epitaxially grown on the AlGaN nano-column, thereby obtaining high-quality AlGaN quantum wells. Avoiding the direct epitaxy of AlGaN quantum wells on GaN nanopillars can reduce the problem of luminous quality degradation due to the stress between GaN/AlGaN. |
| priorityDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.