| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7098017ee36d1bee7e75d86c6a8b839d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2020-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d63072fd9431c0d877f448f6baadf61a |
| publicationDate |
2022-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-115004341-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
It is suitable for manufacture of semiconductor devices including both elements using polysilicon and elements using oxide semiconductors in electronic circuits. A first semiconductor region formed of a polysilicon film 54 is formed on the insulating substrate 50, and insulating films 55 and 58 are stacked on the first semiconductor region. After the contact holes 63 are formed in the insulating films 55 and 58, the oxide semiconductor film 82 is formed on the surface of the insulating film 58b. An etching mask 84 is formed on the surface of the oxide semiconductor film 82 . The oxide semiconductor film 82 is etched using the etching mask 84, the oxide semiconductor film 82 is removed from the contact hole 63, and a second semiconductor region formed of the oxide semiconductor film 60 is formed. A conductive material is embedded in the contact hole 63, and contact electrodes 62s and 62d electrically connected to the first semiconductor region are formed. |
| priorityDate |
2020-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |