http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115000062-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca46be4e68fa1f5a8b2ef4ab654c490a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0642 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07 |
| filingDate | 2022-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_710d79b7496e1355bbce3fbc4ab3dde5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7abbd6af48a27766599064069339ff3e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd2e911169b3b24576d30ab8b3d1c654 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4afe7df0650612679a7645688d98988 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7afb9019c3f525ee8f03e3c2a028d33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_216478e97c0359a13597e9eab92be168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98bb20f650fc14bd2cf7a454b0dc9123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5480b0c28c753d1c36c984eb7de82a80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c95c7221221f2315c390dade833bef7a |
| publicationDate | 2022-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-115000062-A |
| titleOfInvention | Power transistor based on blocking block modulation structure and its fabrication method |
| abstract | The invention discloses a power transistor based on a blocking block modulation structure and a manufacturing method thereof, which mainly solves the problems of current collapse and low breakdown voltage of the existing gallium nitride based power transistor. layer, channel layer and barrier layer, the upper part of the barrier layer is a P-type block and a gate in sequence, and the left side of the P-type block is a barrier block array composed of m parallel-type barrier blocks. There are square grooves, and these square grooves constitute modulation grooves; the left side of each return-type blocking block is provided with a deep groove with a depth of h, and each deep groove is provided with inverted L-shaped metal strips, these metal strips constitute block metal, and the upper side of the block metal Located on the upper part of the blocking block array and the modulation groove, the left side of the block metal is the drain electrode, and the right side of the P-type block is the source electrode. When h>0μm, a recessed transistor is formed, and when h=0μm, the bulk metal is on the upper part of the barrier layer and degenerates into a planar transistor. The present invention can suppress current collapse, increase breakdown voltage, and can be used as a power electronic system. |
| priorityDate | 2022-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117559 http://rdf.ncbi.nlm.nih.gov/pubchem/protein/ACCO01945 |
Total number of triples: 27.