| abstract |
The invention relates to a phenolic resin-based pattern reversal photoresist composition and a method for using the same. The pattern reversal photoresist composition, calculated in mass percentage, comprises the following components: 0-5% of a photosensitizer, a phenolic resin 30%～60%, crosslinking agent 0～10%, leveling agent 0～1%, sensitizer 0～1%, tackifier 0～1%, solvent 30%～70%. The phenolic resin-based pattern reversal photoresist composition of the present invention can form an "inverted trapezoidal" adhesive layer profile, which is beneficial to metal stripping, and has high resolution, high sensitivity, and high contrast. |