http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114990358-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B30-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0321 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B30-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
| filingDate | 2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2023-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2023-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114990358-B |
| titleOfInvention | A doped arsenene nanosheet, its preparation method and application |
| abstract | The present invention provides a method for preparing doped arsenene nanosheets, comprising the step of: S1, calcining the dopant, transport agent and elemental arsenic by a gas phase transport method to obtain a precursor; wherein the dopant is elemental bismuth or elemental tellurium; the transfer agent is elemental iodine or iodide; S2, the precursor is sequentially subjected to soaking treatment, grinding treatment, dispersion treatment, ultrasonic liquid phase stripping treatment and solid-liquid separation treatment to obtain a supernatant , the supernatant is a dispersion containing the doped arsenene nanosheets. The invention completes the modification of arsenene nanosheets, effectively obtains the doped arsenene nanosheets material, not only incorporates new elements into the arsenene nanosheets, but also enables the doped arsenene nanosheets material to maintain the sheet structure; and when the doped arsenene nanosheet is thicker, it still has a band gap, which is conducive to its application as a semiconductor material. |
| priorityDate | 2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.