| abstract |
The present invention provides a method for preparing doped arsenene nanosheets, comprising the steps of: S1, calcining a dopant, a transport agent and elemental arsenic by a gas-phase transport method to obtain a precursor; wherein the dopant is: elemental bismuth or elemental tellurium; the transmission agent is elemental iodine or iodide; S2, the precursor is sequentially subjected to soaking treatment, grinding treatment, dispersion treatment, ultrasonic liquid phase peeling treatment and solid-liquid separation treatment to obtain a supernatant liquid , the supernatant is a dispersion liquid containing the doped arsenene nanosheets. The present invention completes the modification of the arsenene nanosheet, effectively obtains the doped arsenene nanosheet material, not only incorporates new elements into the arsenene nanosheet, but also enables the doped arsenene nanosheet material to maintain the sheet layer. structure; and when the doped arsenene nanosheet is thick, it still has a band gap, which is beneficial to its application as a semiconductor material. |