| abstract |
Methods of selective deposition are described herein. In addition, methods of improving selectivity including ammonia plasma pre-cleaning treatments are also described. In some embodiments, silylamines are used to selectively form surfactant layers on dielectric surfaces. A ruthenium film can then be selectively deposited on the conductive surface. In some embodiments, the ammonia plasma removes oxide contaminants from conductive surfaces without adversely affecting dielectric surfaces. |