http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114975838-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6d5f25e113f0abe6abf99f5fe774fec |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 |
| filingDate | 2022-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c043173fef2c08ac7df67e113b809835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c9e69498b1f588721d29d9e2345f73f |
| publicationDate | 2022-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114975838-A |
| titleOfInvention | A kind of perovskite light-emitting diode and preparation method thereof |
| abstract | The invention discloses a perovskite light-emitting diode, which is sequentially composed of a conductive base layer, a hole transport layer, a perovskite light-emitting layer passivated by 1,3,5- trimesic acid, an electron transport layer, a cathode modification layer and a A metal aluminum electrode is composed; wherein the perovskite light-emitting layer is formed by one-step spin coating of a precursor solution of 1,3,5- trimesic acid with a doping concentration of 1-3mg/ml and then annealing; the preparation method includes the following steps : (1) ITO was selected as the conductive substrate; (2) chlorobenzene solution of TFB:PVK was spin-coated on the ITO substrate, and annealed to form a hole transport layer; (3) spin-coating doping 1, 3, 5-homogeneous The perovskite precursor solution of trimellitic acid is annealed to form a perovskite light-emitting layer; (4) vacuum thermal evaporation of TPBi to form an electron transport layer; (5) vacuum thermal evaporation of lithium fluoride to form a cathode modification layer ; (6) Vacuum thermal evaporation of metal aluminum electrode; through the perovskite light-emitting layer optimized by 1,3,5- trimesic acid, a denser film is formed, which improves carrier recombination and reduces current leakage. |
| priorityDate | 2022-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.