http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114967340-A

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filingDate 2021-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4329f65d7e35ea2151d994180bb88b58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b76743290f813e9949d62dfce75729f
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publicationDate 2022-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114967340-A
titleOfInvention Polypeptide-type negative thick-film photoresist and method of making and using the same
abstract The invention provides a polypeptide-type negative thick-film photoresist and a method for preparing and using the same. The photoresist, calculated in weight percentage, comprises: polypeptide gelatin, 10% to 50%; ferric ion-containing photosensitizer, 0.5%~5%; polymer crosslinking agent, 1%~5%; leveling agent, 100ppm~3000ppm; solvent, balance. The polypeptide-type negative thick-film photoresist has a large molecular and cross-linking degree after curing under light, and the photoresist has good wettability, so for holes with a high aspect ratio, the filling quality is greatly improved. , significantly reducing the possibility of bubbles generated during the filling process, effectively improving the uniformity of the photoresist gap filling performance, and the molecules and cross-linking degree after the photoresist is cured, which can effectively improve the photolithography in high aspect ratio holes. The insulating properties of the glue; it can be prepared and processed in an aqueous solution, thereby eliminating the need for organic solvents, eliminating the need for explosion-proof treatment equipment and exhaust hoods for organic solvents, and storage and disposal of waste solvents, which are environmentally friendly photoresist.
priorityDate 2021-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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