| abstract |
The invention relates to the technical field of organic semiconductor materials, and provides an n-type organic semiconductor material based on isoindigo fluoroboron hybridization, a preparation method thereof, and an organic field effect transistor. The semiconductor material provided by the present invention is a brand-new isoindigo derivative with multiple fluorine atoms and nitrogen atoms, which has strong electron-deficient properties, low LUMO energy level, high stability, n-type electron transport properties, The high coplanarity and excellent intramolecular charge transfer properties of the molecular framework, as well as the broad spectral absorption band, make it also have great application potential in photovoltaic devices. The organic field effect transistor prepared by using the n-type organic semiconductor material of the present invention as the organic layer has n-type transfer characteristics, high electron transfer mobility and good stability in air. |