| abstract |
The present invention relates to a chemically amplified negative resist composition and a resist pattern forming method. An object of the present invention is to provide a chemically amplified negative resist composition and a resist pattern forming method which can improve the resolution at the time of pattern formation and obtain a pattern in which LER and LWR are reduced. The solution to this problem is a chemically amplified negative resist composition containing: (A) a sulfurane or selenurane compound represented by the following formula (A1), and (B) a base polymer , comprising a polymer containing a repeating unit represented by the following formula (B1). In the formula, M is a sulfur atom or a selenium atom. |