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filingDate 2022-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a12ddc6fe10c778e0a7bfe2f21f7e0cb
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publicationDate 2022-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114904560-A
titleOfInvention Preparation method and application of bismuth-supported carbon-defective carbon nitride capable of photocatalytic degradation of dyes
abstract The technical field of the preparation of the inorganic functional material of the present invention particularly relates to a preparation method and application of a bismuth-supported carbon-defective carbon nitride capable of photocatalytic degradation of dyes. First, a carbon-defective carbon nitride with a loose structure is obtained by a high-temperature thermal polymerization method. , and then the bismuth element is supported on the carbon-defective carbon nitride by chemical reduction method. In the preparation method of the invention, by introducing surface defects and metal loading, the prepared bismuth-supported carbon-defective carbon nitride has greatly improved activity for photocatalytic degradation of rhodamine B compared with bulk g-C 3 N 4 . The experimental results show that Bi and carbon vacancy carbon nitride play a synergistic role in photocatalysis. As a plasmonic metal, Bi can concentrate incident photon energy into plasmonic oscillations, and the concentrated resonance energy can be transferred to V‑CN or converted into a local electromagnetic field, which also benefits e‑ / h + in V‑CN separation.
priorityDate 2022-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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