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filingDate 2022-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114899330-A
titleOfInvention A preparation method for optimizing perovskite solar cell devices by doped hole transport layer
abstract The invention belongs to the field of photovoltaics, and in particular relates to a preparation method for optimizing a perovskite solar cell device with a doped modified hole transport layer. The PEDOT:PSS+EDTA‑2Na composite films both play multiple roles in the interface between perovskite and hole layer transport layer (HTL). The doping method is suitable for improving the energy level matching between the hole transport layer and the perovskite absorption layer, and increasing the open circuit voltage V oc ; The higher the degree, the more the hole transport layer and the active layer form a mosaic structure, which is conducive to the penetration of the active layer and the separation of excitons at the interface, and the reunion of the PEDOT layer will increase its conductivity, thereby optimizing the device performance; It is beneficial to the seed-mediated growth of perovskite, making the perovskite thin film dense and uniform, with excellent crystallinity and low defect density, and finally promoting the improvement of the efficiency and stability of tin-based perovskite solar cells.
priorityDate 2022-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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