| abstract |
A semiconductor light-emitting device, a preparation method and a testing method thereof, wherein the semiconductor light-emitting device comprises: a semiconductor substrate layer; a first Bragg reflector; an active layer; a second Bragg reflector; a first Bragg reflector and a second Bragg reflector There are atomic groups in the mirror; the first Bragg mirror or the second Bragg mirror has lattice adjustment atoms, the diffraction angle corresponding to the diffraction peak of the first Bragg mirror and the diffraction peak corresponding to the second Bragg mirror The angles are different, and the lattice tuning atoms are different from the atoms in the bulk atomic group. The semiconductor device can judge whether the period thickness of the first Bragg mirror is deviated or the period thickness of the second Bragg mirror is deviated through the diffraction spectrum, which reduces the process cost and reduces the waste of resources. |