http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114875406-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8bf8e60fa9a60e03d020277fe140347c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-14 |
| filingDate | 2022-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7942515f3358c8510b9232c2014f4b15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3e151495fca4b2274bd1040af0073d0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f026e3589adee1e12e6809c8202e02d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59e064cbf42c76b626e3c7d5a3c3214c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_356dfead392d6523172da9fc60a872df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af4ab6688b5e363b0fb1ca29a05a7eeb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b03c1606f84b17c3aa610f7a73797a34 |
| publicationDate | 2022-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114875406-A |
| titleOfInvention | A kind of copper-molybdenum metal etching solution composition and preparation method thereof |
| abstract | The invention discloses a copper-molybdenum metal etching solution composition. The preparation raw materials include main agents and auxiliary agents, including hydrogen peroxide, organic acids, amino bases, stabilizers, electrochemical inhibitors, alcohol additives and solvents. The invention adopts the synergistic effect of ethylene glycol and electrochemical inhibitor, reduces the surface tension between the etching solution and the metal film layer, enhances the adhesion rate of the etching solution and the metal film layer, and can perfectly solve the problem of chamfering in the etching process. And by using isobutanolamine and triethanolamine as amino base I, it can complex copper ions, stabilize the decomposition rate of hydrogen peroxide, maintain the balance of etching rate, and achieve good etching morphology, with excellent Taper angle, CD-Bais, and small variation. , so that it can carry a copper ion concentration of 12000ppm, and the lower limit of molybdenum residue reaches 0.45μm, which has an excellent etching range, which can meet the impact of customer process fluctuations on production, and is environmentally friendly and waste liquid treatment costs are low. |
| priorityDate | 2022-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.