http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114864576-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85e4740d8eb8981b7846e1887e6c82b4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-71 |
| filingDate | 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36aa3c0fe44201ffbd3c3a5c83059f74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81ed8aaaaa529833f8240a2018b558c8 |
| publicationDate | 2022-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114864576-A |
| titleOfInvention | Capacitors integrated in FinFETs and methods of making the same |
| abstract | The invention discloses a capacitor integrated in FinFET. The capacitor and the resistor are integrated together in the middle process layer. The first oxide layer, the resistor and the capacitor are formed on the first oxide layer covering the gate structure and the surface of the zeroth layer interlayer film. On the surface of an oxide layer; the resistance main layer of the resistance and the resistance covering layer and the intermediate dielectric layer of the capacitor and the formation area of the lower plate share the first mask definition; the formation area of the upper plate is defined by the second mask; the upper plate is defined by the second mask; The coverage area of the plate is smaller than the coverage area of the lower electrode plate; the first interlayer film is covered on the surface of the first oxide layer formed with the capacitor and the resistance; the lower electrode plate, the upper electrode plate and the resistance main body layer The two ends are respectively connected to the top metal zero layer. The invention discloses a manufacturing method of a capacitor integrated in a FinFET. The invention can save process cost and improve process efficiency; and can also easily change the size of the capacitor to realize variable capacitance. |
| priorityDate | 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.