| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2022-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cce075542b2083a3c7550e071f096a22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f181b76dfa2729502b10d4e238c9f6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a02fea1e0c4e8433176e58cb0e9826d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_790e15da592397b2740e4bd2bdfd1031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2f31c00a86e3079a0d8abdd9f15c8ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fc3f3033b542f7d40aa26a5ac055e58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad920a8e9edf6fe51797b22224a928e6 |
| publicationDate |
2022-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114864498-A |
| titleOfInvention |
semiconductor device |
| abstract |
A semiconductor device includes a plurality of first channel nanostructures in a first device region and a plurality of second channel nanostructures in a second device region. The first channel nanostructure is disposed between the first dielectric fin and the second dielectric fin. The second channel nanostructure is disposed between the first dielectric fin and the third dielectric fin. A gate dielectric layer is formed to surround each of the first channel nanostructures and each of the second channel nanostructures. A first work function layer is formed to surround each of the first channel nanostructures. A second work function layer is formed to surround each of the second channel nanostructures. A first gap exists between each adjacent first channel nanostructure, and a second gap exists between each adjacent second channel nanostructure. |
| priorityDate |
2021-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |