| abstract |
The present application provides a wafer epitaxial growth system and a wafer epitaxial growth method. The wafer epitaxial growth system includes: a reaction chamber, the reaction chamber is suitable for accommodating a first preset reaction gas and a second preset reaction gas gas, the first preset reactive gas and the second preset reactive gas are used for deposition on the wafer to form an epitaxial structure; an air intake system, the air intake system includes a first intake channel and at least one second intake channel; The first air inlet channel is connected to the central area of the top of the reaction chamber, and the first air inlet channel is suitable for delivering the first preset reaction gas to the reaction chamber; the second air inlet channel The channel is connected to the edge region of the top of the reaction chamber, and the second inlet channel is suitable for delivering the second preset reaction gas to the reaction chamber. The present application realizes the control of wafer epitaxial growth and avoids the formation of warpage. |