http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114843398-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea61bfc1125f5d765baa56a4d55c1d51 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate | 2022-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_233d2bfa5935ff60e6d99258dc1d2540 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_006a3f414475472b6a589d5d9f46a111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_663d89002f7424ac291af4522cc0d2ab |
| publicationDate | 2022-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114843398-A |
| titleOfInvention | Ferroelectric topological domain structure and preparation method thereof |
| abstract | The invention relates to a preparation method of a ferroelectric topological domain structure, which comprises the following steps: S1: depositing a layer of SRO conductive layer as a bottom electrode on an STO single crystal substrate in a (001) direction by a pulsed laser deposition method; S2: Spread a single layer of PS beads on the surface of the SRO bottom electrode prepared in step S1 as a mask, then etch with oxygen plasma, and then place it in an ion beam etching machine for etching, and finally remove the residual single-layer PS beads A ball mask is used to obtain the bottom electrode of the SRO nano-dot array; S3: Select a BFO target, and use a pulsed laser deposition method to deposit a layer of rhombohedral BFO film on the bottom electrode of the SRO nano-dot array obtained in step S2 to form a nano-dot array , which is a center-type topological domain structure with "cross-shaped" buffer domains out-of-plane and a striped domain of opposite contrast in-plane. The ferroelectric topological domain structure prepared by the invention has the advantages of high density, orderly arrangement, convenient regulation and the like. |
| priorityDate | 2022-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.