http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114823614-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00b05982b59e266f9af78cc072cc2c5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2021-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d098b167f83bb3abb35cfc2a80101ec4 |
| publicationDate | 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114823614-A |
| titleOfInvention | Semiconductor structure and method of forming semiconductor structure |
| abstract | A semiconductor structure and a method for forming the same, the structure comprises: providing a substrate with a conductive layer in the substrate, the substrate exposing the surface of the conductive layer; forming a sacrificial layer on the substrate; forming a first layer in the sacrificial layer opening, the first opening exposes part of the surface of the conductive layer; after the first opening is formed, an electrical interconnection structure is formed in the first opening, and the electrical interconnection structure fills the first opening; an electrical interconnection structure is formed Then, the sacrificial layer is removed to form a second opening between the electrical interconnection structures; a first dielectric layer is formed in the second opening, and the first dielectric layer closes the top of the second opening to form a closed cavity. The performance of the semiconductor structure formed by the method is improved. |
| priorityDate | 2021-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.