http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114823594-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7c43ba956e69337ecb281887ccaa1eb1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49816 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 |
| filingDate | 2022-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58401454a11666d1b8b02dc09fdf8e7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_337b1d616c6d94c935825718482f89db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_290597b00804879e68045b313c739986 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0039c3f72e54b8e8ea84f4b209966317 |
| publicationDate | 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114823594-A |
| titleOfInvention | A hybrid bonding structure and method based on two-dimensional material interface |
| abstract | The invention discloses a hybrid bonding structure and method based on a two-dimensional material interface. The insulating layer on the lower surface of the core particle to be bonded is recessed; the insulating layer in the bonding area on the upper surface of the semiconductor wafer to be bonded is recessed; Concave treatment is carried out, a two-dimensional material layer is arranged in the depression, and then the lower surface of the core particle is bonded to the upper surface of the semiconductor wafer, and the insulating layer is covered with a thin layer of two-dimensional material, which effectively eliminates the dangling bonds on the surface of the insulating layer and makes the bonding The interface reaches atomic level flatness, which effectively reduces the bonding pressure and temperature, and improves the bonding yield; in addition, the two-dimensional material bond interface can reduce the defect density of the bonding interface, reduce the occurrence of electromigration, and pass the high thermal conductivity. The two-dimensional material interface can homogenize the heat dissipation from the core particles to the wafer, thereby improving the reliability of the bonding. |
| priorityDate | 2022-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.