| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2022-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_073ee63b0df5a3ce92a848906d8520cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd9dd494e5921f65ba648bcf31cabe5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59cf4db746e6565c1d14d96eb9aa27eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a48535cda1f72ba2e3f2de9f976fa50e |
| publicationDate |
2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114823527-A |
| titleOfInvention |
semiconductor device |
| abstract |
The present disclosure proposes a semiconductor device. The semiconductor device includes a dielectric fin between the first semiconductor channel and the second semiconductor channel. The semiconductor device includes a first gate structure. The first gate structure includes a first portion and a second portion separated from each other by a dielectric fin. The semiconductor device includes a first gate spacer extending along sidewalls of the first portion of the first gate structure. The semiconductor device includes a second gate spacer extending along sidewalls of the second portion of the first gate structure. At least one of the first gate spacer or the second gate spacer includes a first portion having a first thickness and a second portion having a second thickness, the second thickness being less than the first thickness, and wherein the first portion is thicker than the second portion Also get close to the dielectric fins. |
| priorityDate |
2021-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |