http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114812805-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e96496a9949403e2af2ca913e65bfec |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J1-42 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J1-42 |
filingDate | 2022-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac51d6a684254521f68f6058f0bc76d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50f11302a3d261a9cbb943bebaabdd3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c80fb1d05f054ae1afb6832b2610b2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_943a1c337ba79a1c8b43a95791904ed2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8fcfc3ffd9a06e08a47839c5f5d410a |
publicationDate | 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-114812805-A |
titleOfInvention | PEC photodetector based on SnS2/MoS2 and preparation method of SnS2/MoS2 heterojunction |
abstract | The present application relates to the field of photodetection, in particular, to a SnS 2 /MoS 2 -based PEC photodetector and a preparation method of a SnS 2 /MoS 2 heterojunction. The SnS 2 /MoS 2 -based PEC photodetector includes an electrolyte tank, a reference electrode, a working electrode, and a counter electrode. The fixed ends of the reference electrode, the working electrode, and the counter electrode are all fixed on the cover of the electrolyte tank through a card hole. The free ends are suspended in the electrolyte tank and are not in contact with the bottom of the electrolyte tank. The working electrode includes a conductive substrate, a MoS 2 layer, and a SnS 2 layer. The MoS 2 layer is in contact with the conductive substrate, and the SnS 2 layer is arranged on the MoS 2 layer away from the conductive substrate. One side of the substrate, that is, the working material of the working electrode is SnS 2 /MoS 2 heterojunction. The preparation steps of SnS 2 /MoS 2 heterojunction are as follows: S1, using chemical vapor deposition method to prepare MoS 2 nanosheets on a conductive substrate; S2, using the conductive substrate grown with MoS 2 nanosheets obtained in step S1 as a deposition substrate for growth SnS 2 nanosheets. |
priorityDate | 2022-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.