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filingDate 2022-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114808124-A
titleOfInvention A kind of preparation method of mixed halide perovskite single crystal and polycrystalline thin film
abstract The invention relates to the technical field of optoelectronic functional materials and devices, in particular to a preparation method of mixed halide perovskite single crystal and polycrystalline thin films. The halogen atoms in the mixed halide perovskite single crystal and mixed halide perovskite polycrystalline films include two or three kinds of chlorine, bromine and iodine; a dimethyl sulfoxide solution with additives is used as the A solvent for preparing a precursor solution for the growth of mixed halide perovskite single crystals; the invention realizes the orderly arrangement of different halogen atoms in mixed halide perovskite materials and the regulation of crystal growth orientation for the first time through solvent engineering and component engineering , to improve the crystal defects, stability of the material and its solar cell performance.
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