| abstract |
Programmable resistance memories can be integrated with wide band gap semiconductor, wide band gap semiconductor devices on silicon or insulator substrates. The wide bandgap semiconductor may be a group IV, IV-IV, III-V or II-VI compound semiconductor, such as silicon carbide or gallium nitride. The programmable resistance memory can be PCRAM, RRAM, MRAM or OTP. OTP components can be metal, silicon, polysilicon, silicided polysilicon, or thermally insulated wide bandgap semiconductors. The selectors in programmable resistance memory can be MOS or diodes made of wide bandgap semiconductors. |