http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114775052-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37bd6076d4b80739d89a7cf918c13ff9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-1606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-1616 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-1645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B11-02 |
| filingDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45dbee77521b502acaebb865c7a448f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8329af032414fa6a6c39f7b1b5886ee2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd0e0c1c8bbb9c65cb1c9510960f229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_759baec445995017052a34d2590f3410 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa8227c3ae6bf8ac2a7152a140fd2f5f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b9fc3f7338f3c1153fed7181f561282 |
| publicationDate | 2022-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114775052-A |
| titleOfInvention | Thulium-dysprosium co-doped bromide mid-infrared laser crystal, preparation method and application thereof |
| abstract | The invention discloses a thulium-dysprosium co-doped low-phonon energy bromide laser crystal for 4-5 micron all-solid-state lasers and a preparation method thereof, and relates to the field of mid-infrared laser materials and devices. The molecular formula of the crystal is M(Tm x Dy y Pb 1‑x‑y ) 2 Br 5 , wherein M is a metal element K, Rb, Tl, the value range of x is: 0.01≤x≤0.1, and the value range of y is: 0.001≤y≤0.05. In the laser crystal, thulium ions are used as sensitizing ions, which absorb the energy of commercial semiconductor lasers in the near-infrared band and transmit them to dysprosium ions. Dy 3+ : 6 H 11/2 → 6 H 13/2 transition is achieved by using dysprosium ions as active ions to obtain high-efficiency laser output in the 4-5 micron wavelength band. The low phonon energy M(Tm x Dy y Pb 1‑x‑y ) 2 Br 5 crystal has excellent lasing properties and can be directly pumped by commercial LDs, enabling the miniaturization of dysprosium-activated mid-infrared lasers. |
| priorityDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.