| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d4803b67140ec2a993d39f7bc919b6e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02T10-40 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M7-537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-42 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M7-537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-42 |
| filingDate |
2022-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0135678be829064fbaa3bbd5cf7acfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8390393f5f61d904f324d2f687121a38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66089b48e3d98517973c722315fc601c |
| publicationDate |
2022-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114759767-A |
| titleOfInvention |
An intelligent gate-level driver for silicon carbide power modules |
| abstract |
The invention discloses an intelligent gate-level driver for a silicon carbide power module, which belongs to the technical field of power electronics. The core of the intelligent digital gate driver for silicon carbide power modules is a gate-level driver based on a controlled voltage source. The gate-level driver based on a controlled voltage source dynamically adjusts the switching performance of the power module according to different working states of the module. The digital and intelligent upgrade of its gate-level drive circuit achieves precise and programmable control of the dynamic and static performance of the SiC power module, thereby improving the switching performance and reliability of the SiC power module. |
| priorityDate |
2021-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |