Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01S7-4911 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01S7-4814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18394 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01S7-4911 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-062 |
filingDate |
2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e74ff77204183ffe9d16ca6f692e0992 |
publicationDate |
2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-114746768-A |
titleOfInvention |
Laser light source and lidar system with laser light source |
abstract |
A laser light source (10) comprising a device (120) of surface-emitting semiconductor lasers ( 125i , 1252 , . . . , 125n ) to which a voltage is applied, The operating current is made lower than the threshold current, and the self-emission of the surface-emitting semiconductor laser is prevented. The laser light source further comprises a first semiconductor laser (100) that emits radiation (110) into the surface-emitting semiconductor laser, such that the inductive emission takes place via a so-called injection locking mechanism, and each surface-emitting semiconductor laser The laser emits laser light at the same wavelength and polarization direction as the incident radiation (110). The emission frequency of the first semiconductor laser can be changed by changing the operating current. |
priorityDate |
2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |