http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114736728-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4f9d4a007fac37228f1455e94c2ccb9c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C10M2201-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C10M2201-14 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C10M169-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C10M169-04 |
| filingDate | 2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c625000c91d906ffa19f5b5da6617c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_375d828d4f270a6c2b6ea58741fa9fa0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36a802aa9640a069678e11e9a9aadf66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3564dbd836b712b04ef225d1f9894948 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de1a63d991b2d079e8107a8925cd2402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe8533059c66009ed03d83a1f73f37fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ca0a4c3f0f816d14eef6b2155968620 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc727ffaae72ffa0efa3b1cfe4286c8f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70bd18354aee99f52b26ef5229cec542 |
| publicationDate | 2022-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114736728-A |
| titleOfInvention | A kind of van der Waals heterojunction WS2/h-BN and its self-assembly preparation method |
| abstract | The invention discloses a van der Waals heterostructure WS 2 /h-BN and a self-assembly preparation method thereof, belonging to the technical field of sliding electrical contact material preparation. In the invention, anionic and cationic modifiers are used to modify the surfaces of tungsten disulfide and hexagonal boron nitride respectively, so that the surface of hexagonal boron nitride is positively charged and the surface of tungsten disulfide is negatively charged. The electrostatic attraction of hexagonal boron nitride and tungsten disulfide drives the self-assembly of hexagonal boron nitride and tungsten disulfide to form a van der Waals heterojunction WS 2 /h‑BN. The preparation process of the invention is simple, and can be used for constructing van der Waals heterostructure WS 2 /h-BN on a large scale. The van der Waals heterojunction WS 2 /h-BN synthesized by the invention is a solid lubricating material with super-slip properties, can be used as lubricating coating, lubricating oil additive and self-lubricating composite material lubricating equal, and has wide application. |
| priorityDate | 2022-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.