| abstract |
A method of forming a metal-insulator-metal (MIM) capacitor with a copper top plate and a copper bottom plate can begin with a copper interconnect layer (eg, Cu MTOP) that includes a copper structure that defines the capacitor bottom plate. A passivation region is formed on the bottom plate, and a wide top plate opening is etched in the passivation region to expose the bottom plate. A dielectric layer is deposited into the top plate opening and onto the exposed bottom plate. Narrow via openings are then etched in the passivation region. The wide top plate opening and the narrow via opening are simultaneously filled with copper to define a copper top plate and copper vias in contact with the bottom plate. A first aluminum bond pad is formed on the copper top plate, and a second aluminum bond pad is formed in contact with the copper via to provide a conductive connection to the bottom plate. |