| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a193bbf98a93a588ed793bc48b9a7d3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2021-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb031e8786413e742f2c9b4bac62d3c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44f937c481e016d30ba7274f40c3d2d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4064372b11d1e5a06e0deaa297758c19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2759533d0e6e3b9ec59d724041b9f8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79a228d55211fd2c6440465b715f1c4f |
| publicationDate |
2022-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114725197-A |
| titleOfInvention |
Metal oxide semiconductor device and method of constructing the same |
| abstract |
A metal-oxide-semiconductor MOS device (405) is described that includes a gate terminal, at least one source terminal, and at least one drain terminal, wherein the at least one source terminal and the at least one drain terminal are formed of metal and connected to a plurality of corresponding contact contacts hole. A plurality of local interconnect layers LIL (470) are respectively connected to at least one source terminal and at least one drain terminal through a plurality of corresponding contact vias, wherein at least one source terminal and at least one drain terminal of the plurality of LILs (470) are respectively connected The terminals are configured such that: at least one source terminal and at least one drain terminal do not overlap in a first direction (602) and a second direction (604) orthogonal to the first direction (602); and at least one source terminal and at least one One drain terminal does not overlap or only a certain percentage of at least one source terminal and at least one drain terminal overlap in a third direction (606), wherein the third direction (606) is overlapped with the first direction (602) and the second direction (604) The two are orthogonal. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116632004-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116632004-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115939211-A |
| priorityDate |
2020-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |