http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114695719-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27a862b25ae5a5a49601c6c09c82b7a2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-166 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2020-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc5c838d7feb8895466be96f23538c2e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6d90c27839e8e241599a8b3d8e7082d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33141a678740c34794cc285c956a9d26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e06607f6080863918b187d4493c3bb9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebb776578d737a3f9cbf755386484d57 |
| publicationDate | 2022-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114695719-A |
| titleOfInvention | Preparation method of quantum dot light-emitting diode |
| abstract | The present application relates to the field of display technology, and provides a preparation method of a quantum dot light-emitting diode. The quantum dot light-emitting diode provided by the present application includes an anode and a cathode disposed opposite to each other, a quantum dot light-emitting layer disposed between the anode and the cathode, and an electron transport layer disposed between the quantum dot light-emitting layer and the cathode, wherein the electron transport layer includes The first electron transport layer, and at least one side surface of the first electron transport layer contains amine ligands and/or carboxyl ligands with 8-18 carbon atoms, wherein the preparation method of the first electron transport layer comprises: A zinc oxide prefabricated film is prepared on the prefabricated device substrate on which the first electron transport layer is to be prepared; and a solution of amine ligand and/or carboxyl ligand with a carbon number of 8-18 is deposited on the surface of the zinc oxide prefabricated film, followed by drying treatment , a zinc oxide film was obtained. The preparation method of the quantum dot light emitting diode provided in the present application effectively improves the lifespan of the quantum dot light emitting diode device. |
| priorityDate | 2020-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.