http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114695550-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5eac5aeddc275be9a9f8df69bba257ed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd3ad786fd6ead6c3409c80eb08ff2ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95e95dfd52bb3f712bbdd4790a0f3452 |
| publicationDate | 2022-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114695550-A |
| titleOfInvention | A kind of FinFET structure and its formation method |
| abstract | The invention relates to the technical field of semiconductors, and specifically discloses a method for forming a FinFET structure capable of uniform fin etching and improved fin etching load, comprising: S1: performing well region ion implantation on a silicon substrate; S2: performing on a silicon substrate Sequentially epitaxially grow to form a barrier layer and a Si epitaxial layer; S3: form a hard mask layer on the Si epitaxial layer; S4: use the hard mask layer as a mask to perform fin etching on the Si epitaxial layer to form a plurality of fins. There are fin grooves between adjacent fins, and the etching rate is slowed down or the etching is stopped after the fins are etched to the surface of the barrier layer; S5: a filling layer is formed on the exposed barrier layer and the fin grooves after the fin is etched. The present invention also discloses a FinFET structure obtained by the above forming method. The above-mentioned FinFET structure and method for forming the same can obtain a uniform fin structure with an etching barrier layer by disposing a barrier layer on a silicon substrate, so that the fin etching stops uniformly on the barrier layer. |
| priorityDate | 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.