http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114678769-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_331c182dcdedb5b9ce1bbba8e07f303d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2022-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7be9e180019ab7752d6239396df3b50b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a0bc639bb31bbdce11c6d813ec17a10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e32533efd2d28cb6416731f6f11b1c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8887c405edb04de628c6cb110878b830 |
| publicationDate | 2022-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114678769-A |
| titleOfInvention | A method for preparing ridge waveguides avoiding wafer contamination |
| abstract | The present invention proposes a method for preparing a ridge waveguide to avoid wafer contamination, which is used to solve the technical problem that wafers and fixtures are easily contaminated during the preparation process of the RWG DFB laser ridge waveguide. The method includes the following steps: using chemical vapor deposition The silicon oxide film is grown on the front side of the epitaxially grown DFB wafer and the protective film is grown on the reverse side; the ridge waveguide pattern is fabricated on the front side of the wafer by photolithography; and the contact layer is etched; the etched wafer is used to prepare a ridged waveguide with etching solution I; then the remaining silicon oxide on the front and the protective film on the back are removed with etching solution II to prepare a DFB wafer with a ridged waveguide. By growing the protective film on the backside of the wafer in advance, the present invention can effectively prevent the etching solution I from etching the InP on the backside, and avoid AlInAs and InGaAs grown on the backside of the wafer from being desorbed into the etching solution I, causing contamination of the wafer and the fixture. |
| priorityDate | 2022-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.