http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114678324-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac7643647eee2e00eb2f5e6543a007f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b38f158772a34e9040ee0338daa165e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1063 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c509a45fc9174686d22b7db90daba99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bed1146a4c095c97fdc8462a3d06c5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_674dd3c83f172eafba617b781ee96a9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0dc9e5eb4db12ab74b1a8e3ae73f0bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_534147c37f8f1b81c554e81d66568d94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3c3847c9942b6990f57323c728efd86 |
| publicationDate | 2022-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114678324-A |
| titleOfInvention | A method of forming a contact hole in a semiconductor device, a capacitor manufacturing method |
| abstract | The present disclosure provides a method of forming a contact hole in a semiconductor device, and a method of manufacturing a capacitor. The method of forming a contact hole in a semiconductor device may include, but is not limited to, at least one of the following steps. A semiconductor substrate is provided on which at least one stack is formed. Next, a mask layer having a pattern of contact holes is formed on the entire stack, and the stack is etched based on the mask layer having a pattern of contact holes to form contact holes on the stack. The present disclosure forms a protective film on the inner sidewall of the contact hole before removing the mask layer to protect the inner sidewall of the contact hole. Simultaneously with the removal of the mask layer, the protective film formed above is removed. The present disclosure can protect the inner sidewall of the contact hole from being damaged by the plasma gas used for etching during the process of removing the mask layer, so as to effectively avoid the increase of the curvature in the contact hole. Therefore, the present disclosure can significantly improve the yield of semiconductor devices, especially the yield of semiconductor capacitors. |
| priorityDate | 2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.