http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114639636-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35c057a2d73ae88b28d28f9bb2a08715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7cbf6a1a55b84ca15e7f7de42102989 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2ea87444f03ca036eac824ea45b5306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90488e4a39c34e10c6f9a7afbca0f0ba |
| publicationDate | 2022-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114639636-A |
| titleOfInvention | Semiconductor structure and method of forming the same |
| abstract | A semiconductor structure and a method for forming the same, the semiconductor structure comprises: a substrate; a gate structure located on the substrate; a source-drain structure located in the substrate on both sides of the gate structure; a source-drain contact layer located on the substrate on the source-drain structure between the gate structures; a protective layer, located between the source-drain contact layer and the gate structure; a gate capping layer, located on the source-drain contact layer between the source-drain contact layers on the gate structure. In this embodiment of the present invention, a protection layer is located between the source-drain contact layer and the gate structure, the source-drain contact layer is located on the source-drain structure between the protection layers, and the protection layer is located on the source-drain structure between the protection layers. The layer can well electrically isolate the source-drain contact layer and the gate structure, so that the source-drain contact layer and the gate structure are not easily bridged, which is beneficial to improve the electrical performance of the semiconductor structure. |
| priorityDate | 2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.