http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114628993-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-02 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-309 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3422 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2e684a49ce0d1698e94f40a86088b98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bebfe93b7ba445d2501a1f626ae77050 |
| publicationDate | 2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114628993-A |
| titleOfInvention | A method for fabricating a wide-tuned interband cascaded laser |
| abstract | The invention relates to a method for manufacturing a wide-tuned inter-band cascaded laser, which comprises the steps of: deoxidizing a substrate at high temperature, then raising the substrate to a set temperature, and degassing for a set time under the protection of Sb; After the temperature drops to the set temperature, the substrate is placed in the MBE equipment, and the bottom outer confinement layer, the lower confinement layer of the superlattice, the lower waveguide layer, and the set Superlattice cascade region, upper waveguide layer, superlattice upper confinement layer, top outer confinement layer and upper contact layer for the number of cycles. The beneficial effects of the invention are as follows: the n + type InGaSb material is used as the outer confinement layer, and the InAs/AlSb superlattice is used as the intermediate confinement layer; the new active area structure can better stagger the thickness of the GaInSb/InAs/GaSb active area , which can better stagger the optical gain range of each active region, increase the gain width of the total gain, and improve the ability of the laser to operate at high temperatures. |
| priorityDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.