| abstract |
The present disclosure generally relates to bump integration with redistribution layers. A method of forming a semiconductor device, comprising: forming an interconnect structure over a substrate; forming a first passivation layer over the interconnect structure; forming over the first passivation layer and electrically coupled to the interconnect structure a first conductive feature; conformally forming a second passivation layer over the first conductive feature and the first passivation layer; forming a dielectric layer over the second passivation layer; and over and with the first conductive feature The first conductive feature electrically couples the first bump via and the first conductive bump, wherein the first bump via is between the first conductive bump and the first conductive feature, wherein the first bump passes through the first conductive bump. A hole extends into the dielectric layer, through the second passivation layer, and contacts the first conductive feature, wherein the first conductive bump is over the dielectric layer and is electrically coupled to the first bump via. |