| abstract |
The present disclosure relates to semiconductor structures and methods of making the same. A semiconductor structure includes a first stack of active channel layers disposed over a semiconductor substrate and a second stack of active channel layers, wherein the second stack includes a dummy channel layer, and the first stack is free of any a dummy channel layer; a gate structure bonded to the first stack and the second stack; and a first S/D feature and a second S/D feature disposed adjacent to the first stack , and the second S/D feature is disposed adjacent to the second stack, wherein the second S/D feature overlaps the dummy channel layer. |