http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114628321-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b481a472ff64fb0f259888b923432c4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2021-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8092a73626af0011df5097af4ac90baa |
| publicationDate | 2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114628321-A |
| titleOfInvention | Semiconductor element and method of making the same |
| abstract | The present disclosure provides a semiconductor element having a plurality of capacitors with a shared electrode and a method for fabricating the semiconductor element. The semiconductor element has a substrate, a first capacitor unit, a second capacitor unit and a connection structure. The first capacitor unit has a lower conductive structure and a shared conductive layer, the lower conductive structure is located in the substrate, the shared conductive layer is located on the lower conductive structure, and a first isolation layer is interposed in the shared conductive layer between the conductive layer and the lower conductive structure. The second capacitor unit has the shared conductive layer and an upper conductive layer, the upper conductive layer is located on the shared conductive layer, and a second isolation layer is interposed between the shared conductive layer and the upper conductive layer. The connection structure electrically connects the lower conductive structure and the upper conductive layer, so that the first capacitor unit and the second capacitor unit are parallel. |
| priorityDate | 2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 98.