http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114624561-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_844d2c4d87e99e00ef29a70da06109d1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N23-2202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N23-2255 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-2255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-2202 |
| filingDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c00de6bd9cdc7d2f8ad7daae223ddd53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f21d1fcd2d08acc69201cf3a63d89c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e214a73b9a7e683b5ed2c47199934f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e338954fb8aa986a416116b77898765e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15a4c495e576190ce8ee7e7e9cf8ce92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d129aef3d51845e6d45062d3b2394634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e02c7e3f7001fc1cf1b479e71dc9d6d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_171e9d4329743cf1d96d239086e0cbb9 |
| publicationDate | 2022-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114624561-A |
| titleOfInvention | Test method and system for displacement damage effect of enhancement mode gallium nitride device |
| abstract | The invention discloses a method and system for testing the displacement damage effect of an enhanced-mode gallium nitride device. The method comprises: grouping and numbering the devices to be tested to obtain an enhanced-mode gallium nitride device group and a depletion-mode gallium nitride device group ; Conduct electrical performance tests on the enhancement mode gallium nitride device group and the depletion mode gallium nitride device group, and record the first test results; perform proton radiation on the enhancement mode gallium nitride device group and the depletion mode gallium nitride device group test the electrical properties of the enhancement mode gallium nitride device group and the depletion mode gallium nitride device group after proton irradiation, and record the second test results; based on the second test results of the enhancement mode gallium nitride device group and the depletion mode gallium nitride device group The first comparison result is obtained by the comparative analysis of the first test result; the second comparison result is obtained based on the comparative analysis of the second test result of the depletion mode gallium nitride device group and the first test result; the second comparison result is obtained based on the first comparison result and the first test result. The second comparison results determine the sensitive area of the device under test for charge collection by displacement damage effects. |
| priorityDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117559 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169 |
Total number of triples: 24.