http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114613911-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
| filingDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0e910ed9b21aac9bd2964e82567324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed043cd8b0f160fa7e3003f7950cacdf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7b57e11f19d35611e94f1923ea452c9 |
| publicationDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114613911-A |
| titleOfInvention | A heterojunction structure and photodetector based on tungsten diselenide and IEICO-4F, and preparation thereof |
| abstract | The invention discloses a heterojunction structure and photodetector based on tungsten diselenide and IEICO-4F, and preparation thereof. A single-layer tungsten diselenide film is synthesized on a silicon substrate by a chemical vapor deposition method, and then passed through IEICO‑4F layers were fabricated on tungsten diselenide films by spin coating. The heterojunction energy band is arranged in type II (staggered), which is conducive to the rapid separation of photogenerated carriers generated by incident light to form photocurrent, and as the thickness of the organic semiconductor layer increases, the photoluminescence of tungsten diselenide increases. The peak is significantly quenched, and the device exhibits more excellent photoresponse characteristics. The preparation method of the heterojunction and the photodetector thereof is simple, low in cost, and compatible with silicon technology. The photodetector composed of the heterojunction structure has excellent characteristics such as high responsivity, high detection rate, high stability, and broad spectral response, which provides new guiding significance for a new generation of photodetectors based on tungsten diselenide. |
| priorityDate | 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.