http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114613907-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d5a7c33fc4a0b5999e4bda5d6bce10b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2022-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4013ae8127577589847c062b094e5f37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c53e519af6f29edc91e06ad4b38092dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a7594144f0d5f5b5adb7ffde49a26dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bf7c96355b2206174654caaaf6f1398 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d9c9b774158f0e437b36d427cab93a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_299a7e46f35ff82854015ff83a82d23b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b275502a483ae8c66acf1e0c49751586 |
| publicationDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114613907-A |
| titleOfInvention | A kind of conductive polymer-based bionic memristor and preparation method thereof |
| abstract | The invention discloses a conductive polymer-based biomimetic memristor and a preparation method thereof. By introducing an organic-inorganic hybrid interface of PEDOT:PSS/AlOx or a PEDOT:PSS/Pentacene organic-organic interface, a kind of organic-inorganic interface rich in PEDOT:PSS/Pentacene is constructed. The polymer memristor structure composed of the ion semiconductor layer and the ion collecting conductive layer improves the switching power consumption and stability of the organic memristor, so that it has a biological synaptic response. The memristor structure of the present invention is, from bottom to top, bottom electrode indium tin oxide ITO, PEDOT:PSS organic functional layer annealed at low temperature, inorganic resistive switching layer non-stoichiometric AlOx or organic resistive switching layer pentacene Pentacene, The top electrode metal Al forms a memristor device with a structure of ITO/PEDOT:PSS/AlOx/Al or a structure of ITO/PEDOT:PSS/Pentacene/Al. The invention is used to realize multi-level switching characteristics and improve the switching power consumption (1.2 μw), can be applied to the simulation of synaptic plasticity function, and provides the possibility for low-power consumption application scenarios and neuromorphic computing. |
| priorityDate | 2022-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.